Atomic and nanoscale donor devices in silicon: Progress towards fabrication and characterisation

Date: Friday, August 26th

Time: 10:00 am

Place: 5310 Chamberlin

Speaker: Dr. Neil Curson , University College London

Abstract: Donors in silicon are seen as good candidates for quantum information processing (QIP) applications due to the long spin lifetimes of their valance electrons and nuclei. I will report on our progress towards fabrication and characterisation of atomic and nanoscale devices based on donors in silicon. We have identified the precise atomic positions of buried neutral arsenic (As) donors below a hydrogen-passivated silicon surface using a combination of scanning tunnelling microscopy (STM) and density functional theory (DFT) studies [1,2]. We have also used scanning microwave microscopy (SMM) to image and electronically characterize patterned phosphorus nanostructures fabricated via scanning tunneling microscope-based lithography. The SMM measurements, which are completely non-destructive and sensitive to as few as 7000 sub-surface P atoms, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy (SIMS) for un-patterned phosphorus δ-layers. The ability to determine depth and electrical characteristics of buried P nanostructures leads the way towards 3D imaging of nanoscale electrical devices.<br>
<br>
<br>
<br>
[1] K. Sinthiptharakoon et al., J. Phys. Condens. Matter. 26, 012001 (2014).<br>
<br>
[2] V. Brazdova et al., arXiv:1512.04377

Host: Eriksson

Add this event to your calendar