Abstract: Si/SiGe heterostructures look promising as a scalable platform for quantum computing, but the degeneracy between the low-lying states in the silicon conduction band currently limits device fidelity. Introducing a small concentration of germanium to the quantum well offers a solution to this "valley splitting problem" by introducing random-alloy disorder. In this work, we examine the influence of this disorder in experimental results, comparing data trends and correlations against simulated and analytical results. We also present a numerical framework designed to reproduce disorder-induced errors using simulated charge stability diagrams.